RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B5170FH0-CH9 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Samsung M393B5170FH0-CH9 4GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 49
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 29
  • 读取速度，GB/s
    10.0 left arrow 18.2
  • 写入速度，GB/s
    8.2 left arrow 15.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 3866

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905700-025.A00G 8GB
Kingston 9905700-025.A00G 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3333C16-8GVK 8GB
G Skill Intl F4-3333C16-8GVK 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Kingston 9905700-012.A00G 8GB
Kingston 9905700-012.A00G 8GB
内存RAM