Samsung M393B5170FH0-CK0 4GB vs Corsair CM4X32GE2666C18S2 32GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CM4X32GE2666C18S2 32GB

Corsair CM4X32GE2666C18S2 32GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Corsair CM4X32GE2666C18S2 32GB

需要考虑的原因
Corsair CM4X32GE2666C18S2 32GB

报告一个错误

更快的读取速度，GB/s

15 11.8

测试中的平均数值
更快的写入速度，GB/s

10.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CM4X32GE2666C18S2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

11.8 15.0
写入速度，GB/s

7.3 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-010.A00LF 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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Kingston KHX1600C9S3L/4G 4GB

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Kingston XN205T-HYD2 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Corsair CMW16GX4M2C3000C15 8GB

Corsair CMW16GX4M2C3000C15 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Avant Technology W644GU44J2320NH 32GB

Avant Technology W644GU44J2320NH 32GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB