Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT8G4DFD824A.C16FDD2 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FDD2 8GB

报告一个错误

更快的读取速度，GB/s

17.6 11.8

测试中的平均数值
更快的写入速度，GB/s

14.1 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.8 17.6
写入速度，GB/s

7.3 14.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 3236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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Crucial Technology BLS4G4D240FSA.8FAD 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMSX16GX4M2A2400C16 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB