Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3333C16-8GTZSK 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

G Skill Intl F4-3333C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

20 11.8

测试中的平均数值
更快的写入速度，GB/s

17.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3333C16-8GTZSK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

11.8 20.0
写入速度，GB/s

7.3 17.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GVR 8GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Crucial Technology CT16G4SFD824A.M16FJ 16GB

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Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

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Crucial Technology CT16G4DFS8266.C8FB 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Kingston ACR256X64D3U1333C9 2GB

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Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB