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Samsung M393B5170FH0-CK0 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB

Samsung M393B5170FH0-CK0 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
Micron Technology 4ATF51264HZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    11.8 left arrow 14.8
  • 写入速度，GB/s
    7.3 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2336

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
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Samsung M393A2K40BB0-CPB 16GB
内存RAM
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Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
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内存RAM
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Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
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