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Samsung M393B5270CH0-CH9 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB

Samsung M393B5270CH0-CH9 4GB vs Kingmax Semiconductor GLAG43F-18---------- 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Kingmax Semiconductor GLAG43F-18---------- 8GB 需要考虑的原因
Kingmax Semiconductor GLAG43F-18---------- 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 42
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 40
  • 读取速度，GB/s
    10.6 left arrow 15.7
  • 写入速度，GB/s
    9.0 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 2972

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Kingmax Semiconductor GLAG43F-18---------- 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston 9965662-012.A01G 16GB
Kingston 9965662-012.A01G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK128GX4M4E3200C16 32GB
Corsair CMK128GX4M4E3200C16 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
内存RAM