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Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BL32G32C16S4B.16FB 32GB
比较
Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology BL32G32C16S4B.16FB 32GB
总分
Samsung M4 70T2864QZ3-CF7 1GB
总分
Crucial Technology BL32G32C16S4B.16FB 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
17.3
测试中的平均数值
更快的写入速度,GB/s
2,201.1
15.0
测试中的平均数值
需要考虑的原因
Crucial Technology BL32G32C16S4B.16FB 32GB
报告一个错误
低于PassMark测试中的延时,ns
28
74
左右 -164% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BL32G32C16S4B.16FB 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
74
28
读取速度,GB/s
4,178.4
17.3
写入速度,GB/s
2,201.1
15.0
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
508
3675
Samsung M4 70T2864QZ3-CF7 1GB RAM的比较
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Crucial Technology BL32G32C16S4B.16FB 32GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BL32G32C16S4B.16FB 32GB
AMD R538G1601U2S-UO 8GB
Corsair CMD32GX4M4E4000C19 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Corsair CMD32GX4M2C3200C14T 16GB
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Kingston 9965669-025.A00G 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905678-033.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation W4N2666PS-8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-8GVK 8GB
报告一个错误
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Bug description
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