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Samsung M4 70T2953EZ3-CE6 1GB
Transcend Information AQD-SD4U4GN21-SG 4GB

Samsung M4 70T2953EZ3-CE6 1GB vs Transcend Information AQD-SD4U4GN21-SG 4GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.6
    测试中的平均数值
Transcend Information AQD-SD4U4GN21-SG 4GB 需要考虑的原因
Transcend Information AQD-SD4U4GN21-SG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 73
    左右 -204% 更低的延时
  • 更快的写入速度，GB/s
    6.3 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Transcend Information AQD-SD4U4GN21-SG 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 24
  • 读取速度，GB/s
    3,510.5 left arrow 13.6
  • 写入速度，GB/s
    1,423.3 left arrow 6.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    476 left arrow 1764

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
King Tiger Technology Tigo-2400MHz-4G 4GB
King Tiger Technology Tigo-2400MHz-4G 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMK16GX4M1Z3600C18 16GB
Corsair CMK16GX4M1Z3600C18 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK256GX4M8A2400C16 32GB
Corsair CMK256GX4M8A2400C16 32GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM