Samsung M4 70T5663CZ3-CE6 2GB vs Kingston 9965600-005.A00G 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.4

测试中的平均数值

Kingston 9965600-005.A00G 16GB

需要考虑的原因
Kingston 9965600-005.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

9.1 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingston 9965600-005.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

3,325.1 10.4
写入速度，GB/s

1,441.2 9.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Corsair CMV8GX4M1L2400C16 8GB

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Kingston 9905471-002.A00LF 2GB

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Micron Technology ILG8GS2400A 8GB

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V-Color Technology Inc. TL48G30S816KRGB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX3200C18D4/16G 16GB

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Kingston 99U5429-007.A00LF 2GB

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V-Color Technology Inc. TD416G26D819-VC 16GB

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Samsung M393B2G70BH0-YH9 16GB

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SK Hynix HMT42GR7BFR4A-PB 16GB

SK Hynix HMT42GR7BFR4A-PB 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB