Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 18ASF2G72PDZ-2G6D1 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.5

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

8.9 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

3,325.1 10.5
写入速度，GB/s

1,441.2 8.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

SK Hynix HMA84GR7JJR4N-VK 32GB

SK Hynix HMA84GR7JJR4N-VK 32GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905700-012.A00G 8GB

Kingston 9905700-012.A00G 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB