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Samsung M471A5244CB0-CTD 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB

Samsung M471A5244CB0-CTD 4GB vs A-DATA Technology AO1P26KCST2-BZISHC 16GB

总分
star star star star star
Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

总分
star star star star star
A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

差异 规格 评论

差异

Samsung M471A5244CB0-CTD 4GB 需要考虑的原因
Samsung M471A5244CB0-CTD 4GB
报告一个错误
A-DATA Technology AO1P26KCST2-BZISHC 16GB 需要考虑的原因
A-DATA Technology AO1P26KCST2-BZISHC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 -8% 更低的延时
  • 更快的写入速度，GB/s
    14.2 left arrow 11.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CTD 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 36
  • 读取速度，GB/s
    15.5 left arrow 15.5
  • 写入速度，GB/s
    11.5 left arrow 14.2
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2264 left arrow 2938

Samsung M471A5244CB0-CTD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston 9905701-018.A00G 16GB
Kingston 9905701-018.A00G 16GB
内存RAM
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
A-DATA Technology DDR4 3600 8GB
A-DATA Technology DDR4 3600 8GB
内存RAM
Corsair CMK16GX4M2Z3466C16 8GB
Corsair CMK16GX4M2Z3466C16 8GB
Corsair CMK16GX4M2D3600C18 8GB
Corsair CMK16GX4M2D3600C18 8GB
内存RAM
Kingston 99U5403-124.A00LF 8GB
Kingston 99U5403-124.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X16GC3200C16K2E 16GB
Corsair CM4X16GC3200C16K2E 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
SK Hynix HMA82GU6DJR8N-WM 16GB
内存RAM