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Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.8 left arrow 11.7
    测试中的平均数值
Crucial Technology BLS8G4S26BFSDK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 47
    左右 -15% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 41
  • 读取速度，GB/s
    11.8 left arrow 11.7
  • 写入速度，GB/s
    8.0 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 2058

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M471B1G73QH0-YK0 8GB
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Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
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内存RAM
Kingston KHX2133C11D3/4GX 4GB
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内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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