Samsung M471B5173DB0-YK0 4GB vs Micron Technology 18ASF1G72PDZ-2G3B1 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12 11.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 45

左右 -41% 更低的延时
更快的写入速度，GB/s

9.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 32
读取速度，GB/s

12.0 11.3
写入速度，GB/s

7.8 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C15-8GRBB 8GB

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Crucial Technology BL8G30C15U4B.8FE 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-2400C14-16GVK 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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King Tiger Technology TMKU8G868-240U 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Corsair CMWX16GC3000C16W4D 16GB