Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-4000C18-8GTRS 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-4000C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更快的读取速度，GB/s

17.6 12.3

测试中的平均数值
更快的写入速度，GB/s

18.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-4000C18-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

12.3 17.6
写入速度，GB/s

8.0 18.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-8GTRS 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905598-019.A00G 16GB

Kingston 9905598-019.A00G 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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