Samsung M471B5273CH0-CH9 4GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Panram International Corporation L421008G4C1528K34O8A 8GB

需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 48

左右 -118% 更低的延时
更快的读取速度，GB/s

17.5 8.9

测试中的平均数值
更快的写入速度，GB/s

12.8 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Panram International Corporation L421008G4C1528K34O8A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 22
读取速度，GB/s

8.9 17.5
写入速度，GB/s

5.9 12.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 3013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

Samsung M378B5773QB0-CK0 2GB

Samsung M378B5773QB0-CK0 2GB

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB