Samsung M471B5273DH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.3 9.8

测试中的平均数值
更快的写入速度，GB/s

9.0 7.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

13.3 9.8
写入速度，GB/s

9.0 7.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 2126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMV4GX4M1A2133C15 4GB

Corsair CMV4GX4M1A2133C15 4GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB