Samsung M471B5273DH0-YK0 4GB vs Kingston HP26D4U9S1ME-4 4GB

总分

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

总分

Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

差异规格评论

差异

Samsung M471B5273DH0-YK0 4GB

需要考虑的原因
Samsung M471B5273DH0-YK0 4GB

报告一个错误

Kingston HP26D4U9S1ME-4 4GB

需要考虑的原因
Kingston HP26D4U9S1ME-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

16.2 12.9

测试中的平均数值
更快的写入速度，GB/s

12.3 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-YK0 4GB

Kingston HP26D4U9S1ME-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

12.9 16.2
写入速度，GB/s

9.0 12.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1958 2487

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-2666C15-8GVK 8GB

Kingston 9905471-002.A00LF 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB