Samsung M471B5273EB0-CK0 4GB vs G Skill Intl F4-2133C15-4GVR 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

G Skill Intl F4-2133C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 40

左右 -21% 更低的延时
更快的读取速度，GB/s

15 12.3

测试中的平均数值
更快的写入速度，GB/s

10.3 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-2133C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 33
读取速度，GB/s

12.3 15.0
写入速度，GB/s

8.9 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2133C15-4GVR 4GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Corsair CMD8GX4M2B3000C15 4GB

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Corsair CMK16GX4M2B3200C16 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB