Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3600C16-8GTZKW 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

G Skill Intl F4-3600C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 30

左右 -36% 更低的延时
更快的读取速度，GB/s

21.1 10.6

测试中的平均数值
更快的写入速度，GB/s

17.4 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3600C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 22
读取速度，GB/s

10.6 21.1
写入速度，GB/s

6.8 17.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 4142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851U6AFR6N-UH 4GB

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Samsung M378B5273CH0-CH9 4GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston KF2933C17S4/16G 16GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB