Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 -20% 更低的延时
更快的读取速度，GB/s

14.6 10.6

测试中的平均数值
更快的写入速度，GB/s

9.9 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 25
读取速度，GB/s

10.6 14.6
写入速度，GB/s

6.8 9.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1479 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3333C16-4GRRD 4GB

G Skill Intl F4-3333C16-4GRRD 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB