Samsung M471B5673FH0-CH9 2GB vs Samsung M471B5173DB0-YK0 4GB

总分

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

差异规格评论

差异

Samsung M471B5673FH0-CH9 2GB

需要考虑的原因
Samsung M471B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 45

左右 9% 更低的延时
更快的写入速度，GB/s

8.2 7.8

测试中的平均数值

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12 11.1

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5173DB0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 45
读取速度，GB/s

11.1 12.0
写入速度，GB/s

8.2 7.8
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1348 1939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMWX16GC3000C15W4 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Patriot Memory (PDP Systems) PSD48G26662 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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Kingston 9905702-014.A00G 8GB

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Crucial Technology BL8G24C16U4B.8FB 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston 9905624-044.A00G 8GB

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Samsung M471B5773DH0-CH9 2GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston XJV223-MIE 16GB

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Team Group Inc. ZEUS-2133 8GB

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Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB