RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB
总分
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
总分
Crucial Technology BLS4G4D240FSE.8FE 4GB
差异
规格
评论
差异
需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
低于PassMark测试中的延时,ns
46
65
左右 29% 更低的延时
更快的写入速度,GB/s
13.6
8.7
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB
报告一个错误
更快的读取速度,GB/s
17.5
14.2
测试中的平均数值
规格
完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
65
读取速度,GB/s
14.2
17.5
写入速度,GB/s
13.6
8.7
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2717
1921
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT351R7EFR8C-RD 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-4000C19-8GTZSW 8GB
AMD R538G1601U2S 8GB
Kingston KHX3200C16D4/16GX 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M378A1K43EB2-CVF 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C18-8GTZRB 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMT32GX4M2C3200C16 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3000C16-8GRS 8GB
Kingston 9905403-515.A00LF 8GB
Kingston 99U5701-003.A00G 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Samsung M3 78T2953EZ3-CF7 1GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
报告一个错误
×
Bug description
Source link