RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M378A5244CB0-CVF 4GB
比较
SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M378A5244CB0-CVF 4GB
总分
SK Hynix HMA451U6AFR8N-TF 4GB
总分
Samsung M378A5244CB0-CVF 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
37
左右 -23% 更低的延时
更快的读取速度,GB/s
16
14.7
测试中的平均数值
更快的写入速度,GB/s
12.3
10.6
测试中的平均数值
更高的内存带宽,mbps
23400
17000
左右 1.38 更高的带宽
规格
完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M378A5244CB0-CVF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
37
30
读取速度,GB/s
14.7
16.0
写入速度,GB/s
10.6
12.3
内存带宽,mbps
17000
23400
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)
2438
2709
SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A5244CB0-CVF 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMW16GX4M2Z3600C18 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CM4X16GE2666C16K8 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMR16GX4M2C3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905700-024.A00G 8GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-4000C16-16GVK 16GB
PNY Electronics PNY 2GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905625-065.A00G 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GVK 16GB
报告一个错误
×
Bug description
Source link