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SK Hynix HMA81GS6CJR8N-XN 8GB
Samsung M471A1K43DB1-CWE 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异 规格 评论

差异

SK Hynix HMA81GS6CJR8N-XN 8GB 需要考虑的原因
SK Hynix HMA81GS6CJR8N-XN 8GB
报告一个错误
Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 11.9
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA81GS6CJR8N-XN 8GB
Samsung M471A1K43DB1-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 33
  • 读取速度，GB/s
    15.5 left arrow 16.1
  • 写入速度，GB/s
    11.9 left arrow 13.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2734 left arrow 2987

SK Hynix HMA81GS6CJR8N-XN 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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SK Hynix HMA81GS6CJR8N-XN 8GB
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内存RAM
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内存RAM
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