RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M471A2K43EB1-CWE 16GB
比较
SK Hynix HMA82GS6DJR8N-XN 16GB vs Samsung M471A2K43EB1-CWE 16GB
总分
SK Hynix HMA82GS6DJR8N-XN 16GB
总分
Samsung M471A2K43EB1-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA82GS6DJR8N-XN 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
55
左右 33% 更低的延时
需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
更快的读取速度,GB/s
15.8
15.3
测试中的平均数值
更快的写入速度,GB/s
13.8
12.9
测试中的平均数值
规格
完整的技术规格清单
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M471A2K43EB1-CWE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
37
55
读取速度,GB/s
15.3
15.8
写入速度,GB/s
12.9
13.8
内存带宽,mbps
25600
25600
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2973
2701
SK Hynix HMA82GS6DJR8N-XN 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43EB1-CWE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-010.A00LF 2GB
Kingston ACR32D4U2S8ME-16 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M378A2K43CB1-CRC 16GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Avant Technology F641GU67F9333G 8GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4000C19-16GTZR 16GB
Kingston KF552C40-16 16GB
V-GEN D4H8GL32A8TS 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M471A5244CB0-CWE 4GB
Elpida EBE21UE8ACUA-8G-E 2GB
Teikon TMA851S6CJR6N-VKSC 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3000C14-8GTZ 8GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston 9905678-042.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C14-16GTRS 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
报告一个错误
×
Bug description
Source link