SK Hynix HMP125U6EFR8C-S6 2GB vs Samsung M393A2K43BB1-CPB 16GB

总分

SK Hynix HMP125U6EFR8C-S6 2GB

SK Hynix HMP125U6EFR8C-S6 2GB

总分

Samsung M393A2K43BB1-CPB 16GB

Samsung M393A2K43BB1-CPB 16GB

差异规格评论

差异

SK Hynix HMP125U6EFR8C-S6 2GB

需要考虑的原因
SK Hynix HMP125U6EFR8C-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 11.8

测试中的平均数值
更快的写入速度，GB/s

2,042.4 13.3

测试中的平均数值

Samsung M393A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M393A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 61

左右 -91% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMP125U6EFR8C-S6 2GB

Samsung M393A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 32
读取速度，GB/s

4,448.3 11.8
写入速度，GB/s

2,042.4 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

860 2844

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology BLS16G4D26BFSB.16FBR 16GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Corsair CMY8GX3M2A2666C10 4GB

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Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

A-DATA Technology DDR4 2666 8GB

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Kingston 9965596-016.B01G 8GB

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Kingston 9905403-061.A00LF 2GB

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Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Crucial Technology CT32G48C40U5.M16A1 32GB

Crucial Technology CT32G48C40U5.M16A1 32GB

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Samsung M378B5773CH0-CH9 2GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

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G Skill Intl F4-2400C17-8GSXK 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB