SK Hynix HMT325S6BFR8C-H9 2GB vs G Skill Intl F4-3200C16-16GTZRX 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

G Skill Intl F4-3200C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

18.4 11.6

测试中的平均数值
更快的写入速度，GB/s

15.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C16-16GTZRX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

11.6 18.4
写入速度，GB/s

7.3 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6BFR8C-H9 2GB

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Ramaxel Technology RMSA3260ME78HAF-2666 8GB

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Panram International Corporation W4U2133PS-8G 8GB

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A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-4000C16-16GTRS 16GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB