SK Hynix HMT351R7EFR8C-RD 4GB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更快的读取速度，GB/s

16.7 9.8

测试中的平均数值
更快的写入速度，GB/s

15.1 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 35
读取速度，GB/s

9.8 16.7
写入速度，GB/s

7.2 15.1
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2065 3191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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PUSKILL DDR3 1600 8G 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Panram International Corporation W4U2133PS-8G 8GB

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Kingston HP698651-154-MCN 8GB

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G Skill Intl F4-3200C14-8GTRS 8GB

G Skill Intl F4-3200C14-8GTRS 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston 9965525-018.A00LF 4GB

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V-Color Technology Inc. TL48G32S8KSRGB16 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905734-082.A00G 16GB

Kingston 9905734-082.A00G 16GB