SK Hynix HMT351S6CFR8C-PB 4GB vs Teikon TMA81GU6AFR8N-UHSC 8GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

Teikon TMA81GU6AFR8N-UHSC 8GB

需要考虑的原因
Teikon TMA81GU6AFR8N-UHSC 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的读取速度，GB/s

16.5 11.6

测试中的平均数值
更快的写入速度，GB/s

12.1 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Teikon TMA81GU6AFR8N-UHSC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

11.6 16.5
写入速度，GB/s

8.0 12.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1854 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673FH0-CH9 2GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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ASint Technology SSA302G08-EGN1C 4GB

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Kingston 9965640-035.C00G 32GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CMWX8GD3600C18W2D 8GB

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Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB