SK Hynix HMT425S6CFR6A-PB 2GB vs Samsung M471A2K43BB1-CRC 16GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Samsung M471A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 -8% 更低的延时
更快的读取速度，GB/s

14.2 10.1

测试中的平均数值
更快的写入速度，GB/s

9.5 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M471A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 38
读取速度，GB/s

10.1 14.2
写入速度，GB/s

7.1 9.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 2470

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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Crucial Technology BLS4G4D26BFSE.8FD2 4GB

G Skill Intl F5-6400J3239G16G 16GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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A-DATA Technology VDQVE1B16 2GB

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Crucial Technology CT8G4SFS824A.M8FD 8GB

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