SK Hynix HMT42GR7AFR4A-PB 16GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB

报告一个错误

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

19.6 11.7

测试中的平均数值
更快的写入速度，GB/s

18.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4A-PB 16GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

11.7 19.6
写入速度，GB/s

8.0 18.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2535 4095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMK8GX4M2C3000C16 4GB

Corsair CMK8GX4M2C3000C16 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston KHX3466C17D4/16GX 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB