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SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905734-022.A00G 16GB

SK Hynix HYMP112U64CP8-S6 1GB vs Kingston 9905734-022.A00G 16GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分
star star star star star
Kingston 9905734-022.A00G 16GB

Kingston 9905734-022.A00G 16GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S6 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,076.1 left arrow 12.1
    测试中的平均数值
Kingston 9905734-022.A00G 16GB 需要考虑的原因
Kingston 9905734-022.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 59
    左右 -74% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905734-022.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 34
  • 读取速度，GB/s
    4,723.5 left arrow 15.7
  • 写入速度，GB/s
    2,076.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    741 left arrow 3142

SK Hynix HYMP112U64CP8-S6 1GB RAM的比较

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905734-022.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905734-022.A00G 16GB
Kingston 9905734-022.A00G 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905678-028.A00G 8GB
Kingston 9905678-028.A00G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston 9965596-036.B00G 8GB
Kingston 9965596-036.B00G 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW256GX4M8E3200C16 32GB
Corsair CMW256GX4M8E3200C16 32GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Avant Technology J641GU49J2320NE 8GB
Avant Technology J641GU49J2320NE 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM