SK Hynix HYMP112U64CP8-Y5 1GB vs Kingston 9905622-055.A00G 4GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Kingston 9905622-055.A00G 4GB

需要考虑的原因
Kingston 9905622-055.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 62

左右 -158% 更低的延时
更快的写入速度，GB/s

9.5 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston 9905622-055.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 24
读取速度，GB/s

4,216.7 14.5
写入速度，GB/s

1,658.4 9.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 2171

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston CBD26D4S9S8ME-8 8GB

Kingston CBD26D4S9S8ME-8 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB