Smart Modular SF564128CJ8N6NNSEG 4GB vs Micron Technology 18ADF2G72AZ-2G3B1 16GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

Micron Technology 18ADF2G72AZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

13.7 12.3

测试中的平均数值
更快的写入速度，GB/s

9.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

12.3 13.7
写入速度，GB/s

7.3 9.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1570 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2400C15-16GFT 16GB

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Crucial Technology CT8G4DFD824A.C16FBD2 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3200C22-8GRS 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Team Group Inc. 16GB

Team Group Inc. 16GB