Swissbit MEU25664D6BC2EP-30 2GB vs Corsair CMW16GX4M2K4266C19 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 19

测试中的平均数值

Corsair CMW16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMW16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 68

左右 -196% 更低的延时
更快的写入速度，GB/s

16.5 1,944.9

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Corsair CMW16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 23
读取速度，GB/s

3,973.0 19.0
写入速度，GB/s

1,944.9 16.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

673 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2G4000C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M393A4K40BB0-CPB 32GB

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Samsung M471A4G43AB1-CWE 32GB

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G Skill Intl F4-4000C15-8GTRG 8GB