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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3000C14-8GTZR 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3000C14-8GTZR 8GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 19.5
    测试中的平均数值
G Skill Intl F4-3000C14-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3000C14-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 46
    左右 -77% 更低的延时
  • 更快的写入速度，GB/s
    15.3 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3000C14-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 26
  • 读取速度，GB/s
    5,535.6 left arrow 19.5
  • 写入速度，GB/s
    1,852.4 left arrow 15.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3635

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

G Skill Intl F4-3000C14-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-3733C17-8GTZKK 8GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3000C14-8GTZR 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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A-DATA Technology VDQVE1B16 2GB
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Samsung M471B5273DH0-CH9 4GB
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G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
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Smart Modular SF564128CJ8N6NNSEG 4GB
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内存RAM
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内存RAM
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Crucial Technology CT8G4SFS632A 8GB
内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
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