TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMW32GX4M4D3600C18 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.3

测试中的平均数值
更快的写入速度，GB/s

870.4 15.8

测试中的平均数值

Corsair CMW32GX4M4D3600C18 8GB

需要考虑的原因
Corsair CMW32GX4M4D3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMW32GX4M4D3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 18.3
写入速度，GB/s

870.4 15.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Kingston 9905403-090.A01LF 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

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Kingston 9965516-112.A00LF 16GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB