TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-2400C15Z8GNT 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值
更快的写入速度，GB/s

870.4 6.5

测试中的平均数值

G Skill Intl F4-2400C15Z8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C15Z8GNT 8GB

报告一个错误

低于PassMark测试中的延时，ns

69 87

左右 -26% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-2400C15Z8GNT 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 69
读取速度，GB/s

3,155.6 13.6
写入速度，GB/s

870.4 6.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 1598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Dust Leopard DDR4-2400 CL17 8GB 8GB

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Corsair VS2GB1333D4 2GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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Samsung M378B5173BH0-CH9 4GB

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Kingston 9905403-500.A01LF 8GB

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Kingston KP223C-ELD 2GB

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Kingston 9905678-014.A00G 4GB

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Ramos Technology EEB8GB681CAE-16IC 8GB

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Samsung V-GeN D4S8GL24A8 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Corsair CMK16GX4M4C3200C16 4GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMD16GX4M2B3600C18 8GB

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Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Corsair CMK64GX4M4B3333C16 16GB

Corsair CMK64GX4M4B3333C16 16GB

Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB