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TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.7
    测试中的平均数值
Chun Well Technology Holding Limited D4U0826190B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 53
    左右 -83% 更低的延时
  • 更快的写入速度，GB/s
    12.9 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 29
  • 读取速度，GB/s
    3,726.4 left arrow 16.7
  • 写入速度，GB/s
    1,590.1 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3273

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX3000C16D4/16GX 16GB
Kingston KHX3000C16D4/16GX 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Corsair CMX4GX3M1A1600C11 4GB
Corsair CMX4GX3M1A1600C11 4GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMN32GX4M2Z3600C18 16GB
Corsair CMN32GX4M2Z3600C18 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
Corsair CMP4GX3M2B1600C8 2GB
Corsair CMP4GX3M2B1600C8 2GB
Kingston 9905744-023.A00G 16GB
Kingston 9905744-023.A00G 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix GKE800UD102408-2133 8GB
SK Hynix GKE800UD102408-2133 8GB
内存RAM