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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology AFSD416ES1P 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology AFSD416ES1P 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.5
    测试中的平均数值
Micron Technology AFSD416ES1P 16GB 需要考虑的原因
Micron Technology AFSD416ES1P 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 96
    左右 -284% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology AFSD416ES1P 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 25
  • 读取速度，GB/s
    2,725.2 left arrow 14.5
  • 写入速度，GB/s
    1,336.0 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 2620

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Micron Technology AFSD416ES1P 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Micron Technology AFSD416ES1P 16GB
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