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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Crucial Technology CT8G4SFS8213.C8FBD1 8GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 11% 更低的延时
更快的读取速度,GB/s
12.6
11
测试中的平均数值
更快的写入速度,GB/s
7.2
6.1
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
28
读取速度,GB/s
12.6
11.0
写入速度,GB/s
7.2
6.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2051
1775
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HYMP112U64CP8-S5 1GB
Samsung M378A1K43BB1-CPB 8GB
Kingston KHX16LC9/8GX 8GB
Kingston KF3600C18D4/32GX 32GB
Samsung M378T5663QZ3-CF7 2GB
Maxsun MSD48G30Q3 8GB
Kingston 99U5428-101.A00LF 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
SK Hynix HYMP512U64CP8-S5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3600C18D4/32GX 32GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK64GX4M82800C14 8GB
Kingston K531R8-MIN 4GB
Samsung M471A2K43CB1-CRCR 16GB
报告一个错误
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Bug description
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