RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR4 2400 16GB
Avant Technology W641GU48J7240ND 8GB
Compare
A-DATA Technology DDR4 2400 16GB vs Avant Technology W641GU48J7240ND 8GB
Overall score
A-DATA Technology DDR4 2400 16GB
Overall score
Avant Technology W641GU48J7240ND 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DDR4 2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
32
Around 6% lower latency
Faster reading speed, GB/s
16.8
16.5
Average value in the tests
Reasons to consider
Avant Technology W641GU48J7240ND 8GB
Report a bug
Faster write speed, GB/s
12.7
11.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DDR4 2400 16GB
Avant Technology W641GU48J7240ND 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
30
32
Read speed, GB/s
16.8
16.5
Write speed, GB/s
11.5
12.7
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3019
2713
A-DATA Technology DDR4 2400 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
Avant Technology W641GU48J7240ND 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR4 2400 16GB
Avant Technology W641GU48J7240ND 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMV8GX4M1A2666C18 8GB
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Kingston 9905471-006.A01LF 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4DFD8266.C16FE 16GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M471A1K43BB1-CTD 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMT32GX4M4C3600C18 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-32GVK 32GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMD32GX4M4B3200C16 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C17-8GVKB 8GB
Report a bug
×
Bug description
Source link