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AMD R538G1601U2S 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB

AMD R538G1601U2S 8GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

Overall score
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Overall score
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Differences Specifications Comments

Differences

AMD R538G1601U2S 8GB Reasons to consider
AMD R538G1601U2S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 32
    Around 41% lower latency
  • Faster reading speed, GB/s
    18.4 left arrow 16
    Average value in the tests
Samsung V-GeN D4S16GL26A8TL6 16GB Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
  • Faster write speed, GB/s
    13.4 left arrow 12.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
AMD R538G1601U2S 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    19 left arrow 32
  • Read speed, GB/s
    18.4 left arrow 16.0
  • Write speed, GB/s
    12.3 left arrow 13.4
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    3189 left arrow 1897

AMD R538G1601U2S 8GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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