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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Samsung V-GeN D4S16GL26A8TL6 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Below the latency in the PassMark tests, ns
27
32
Around 16% lower latency
Faster reading speed, GB/s
16.7
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
Faster write speed, GB/s
13.4
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
32
Read speed, GB/s
16.7
16.0
Write speed, GB/s
11.8
13.4
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2756
1897
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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