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Crucial Technology BLS8G3N169ES4.16FE 8GB
AMD R9S48G3206U2S 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs AMD R9S48G3206U2S 8GB

Overall score
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Overall score
star star star star star
AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Differences Specifications Comments

Differences

Crucial Technology BLS8G3N169ES4.16FE 8GB Reasons to consider
Crucial Technology BLS8G3N169ES4.16FE 8GB
Report a bug
AMD R9S48G3206U2S 8GB Reasons to consider
AMD R9S48G3206U2S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 41
    Around -11% lower latency
  • Faster reading speed, GB/s
    20.6 left arrow 13.3
    Average value in the tests
  • Faster write speed, GB/s
    13.9 left arrow 8.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology BLS8G3N169ES4.16FE 8GB
AMD R9S48G3206U2S 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 37
  • Read speed, GB/s
    13.3 left arrow 20.6
  • Write speed, GB/s
    8.8 left arrow 13.9
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2394 left arrow 3518

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM comparisons

Samsung M471B5673FH0-CH9 2GB
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AMD R9S48G3206U2S 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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