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Crucial Technology BLS8G4D26BFSC.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
Crucial Technology BLS8G4D26BFSC.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G4D26BFSC.16FE 8GB
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Faster reading speed, GB/s
16.1
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
66
Around -175% lower latency
Faster write speed, GB/s
12.5
8.3
Average value in the tests
Specifications
Complete list of technical specifications
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
66
24
Read speed, GB/s
16.1
16.0
Write speed, GB/s
8.3
12.5
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1810
2925
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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