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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Below the latency in the PassMark tests, ns
27
71
Around 62% lower latency
Faster reading speed, GB/s
16.7
15.6
Average value in the tests
Faster write speed, GB/s
11.8
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
71
Read speed, GB/s
16.7
15.6
Write speed, GB/s
11.8
6.4
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2756
1650
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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