RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB vs Samsung M471B5273CH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
48
Around 25% lower latency
Faster reading speed, GB/s
9.3
8.9
Average value in the tests
Faster write speed, GB/s
7.0
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81% higher bandwidth
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
36
48
Read speed, GB/s
9.3
8.9
Write speed, GB/s
7.0
5.9
Memory bandwidth, mbps
19200
10600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1891
1420
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM comparisons
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Samsung DDR3 8GB 1600MHz 8GB
AMD R748G2606U2S 8GB
Mushkin 991586 2GB
G Skill Intl F4-2133C15-8GRB 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905700-011.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-4GVR 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M471B5273CH0-CH9 4GB
Kingston MSI16D3LS1MNG/8G 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4000C18-32GVK 32GB
Corsair VSA2GSDS667C4 2GB
Kingston 9905599-029.A00G 4GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Report a bug
×
Bug description
Source link