Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB vs Samsung M471B5273CH0-CH9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Overall score
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 48
    Around 25% lower latency
  • Faster reading speed, GB/s
    9.3 left arrow 8.9
    Average value in the tests
  • Faster write speed, GB/s
    7.0 left arrow 5.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81% higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    36 left arrow 48
  • Read speed, GB/s
    9.3 left arrow 8.9
  • Write speed, GB/s
    7.0 left arrow 5.9
  • Memory bandwidth, mbps
    19200 left arrow 10600
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1891 left arrow 1420
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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