RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology TEAMGROUP-UD4-3000 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Micron Technology TEAMGROUP-UD4-3000 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Reasons to consider
Micron Technology TEAMGROUP-UD4-3000 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
29
Around -32% lower latency
Faster reading speed, GB/s
17
13.4
Average value in the tests
Faster write speed, GB/s
11.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
22
Read speed, GB/s
13.4
17.0
Write speed, GB/s
9.0
11.9
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
3112
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Transcend Information TS2GLH64V4B 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology TEAMGROUP-UD4-3000 16GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905622-025.A00G 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KF3733C19D4/16GX 16GB
Elpida EBJ41UF8BDW0-GN-F 4GB
G Skill Intl F4-2133C15-8GSQ 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A1K43DB1-CTD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Corsair CM5S16GM4800A40N2 16GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A2K43CB1-CRC 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD16GX4M4C3200C16 4GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Report a bug
×
Bug description
Source link