RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M393A1K43BB0-CRC 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M393A1K43BB0-CRC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Samsung M393A1K43BB0-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Samsung M393A1K43BB0-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
48
62
Around -29% lower latency
Faster reading speed, GB/s
11.6
7.4
Average value in the tests
Faster write speed, GB/s
8.4
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M393A1K43BB0-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
48
Read speed, GB/s
7.4
11.6
Write speed, GB/s
5.9
8.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1612
2466
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Samsung M393A1K43BB0-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M393A1K43BB0-CRC 8GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3200C14-8GTZN 8GB
Kingston 9965525-018.A00LF 4GB
Samsung M378A2K43BB1-CPB 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMH16GX4M2D3600C18 8GB
Samsung M395T2863QZ4-CF76 1GB
DSL Memory D4SS12082SH21A-A 8GB
AMD AE34G1601U1 4GB
Corsair CMK128GX4M8B3000C16 16GB
Kingston 9905471-006.A01LF 4GB
Kingston KF3600C16D4/8GX 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3800C14-8GTZN 8GB
Kingston 99U5429-014.A00LF 4GB
Kingston 9965604-001.D00G 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16HTS51264HY-800A1 4GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Report a bug
×
Bug description
Source link